Product Overview
The 7Semi UCC21220A Dual-Channel Isolated Gate Driver Breakout is designed to drive power transistors such as MOSFETs and GaNFETs, delivering a peak source current of 4A and a peak sink current of 6A. It features a 3.0kVRMS isolation barrier between the input and output channels, ensuring robust operation in high-voltage environments. The module offers fast switching performance with a maximum propagation delay of 40ns and a delay matching of 5ns, enhancing efficiency in power conversion applications. Integrated protection features include undervoltage lockout (UVLO) and a disable function, which enhance system reliability by safeguarding against undervoltage conditions and allowing for immediate shutdown when necessary. This breakout board is suitable for applications requiring efficient and reliable gate driving capabilities, including motor drives, power converters, and industrial automation systems.
- High Current Drive Strength: 4A peak-source, 6A peak-sink for driving MOSFETs and GaNFETs.
- Exceptional Propagation Delay: Maximum propagation delay of 40ns ensures high-speed operation.
- Precision Delay Matching: 5ns maximum delay matching ensures optimal performance in half-bridge configurations.
- Robust Ground Bounce Protection: Greater than 100V/ns CMTI for reliable operation in noisy environments.
- Integrated Protection: DIS pin, UVLO, and active pulldown provide enhanced safety and control.
- Versatile Configuration: Can be used as low-side, high-side, or half-bridge drivers with parallel output options for increased drive strength.
-
Server Power Supplies
-
Solar Inverter Systems
-
Telecom Brick Converters
-
Industrial Transportation and Robotics
Warranty Information
Reviews
