UCC21330 Dual-channel Isolated Gate Driver Breakout

The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout is engineered to drive power transistors such as MOSFETs, IGBTs, and SiC devices, offering a peak source current of 4A and a peak sink current of 6A. It features a 3kVRMS isolation barrier between the input and output channels, ensuring robust operation in high-voltage environments. The module includes programmable dead-time control, enabling precise timing adjustments to minimize switching losses and prevent shoot-through conditions. Integrated protection mechanisms, such as undervoltage lockout (UVLO) and a disable function, enhance system reliability by safeguarding against undervoltage conditions and allowing for immediate shutdown when necessary. This breakout board is suitable for applications requiring efficient and reliable gate driving capabilities, including motor drives, power converters, and industrial automation systems.

• Flexible Configuration: Supports dual low-side, dual high-side, or half-bridge configurations for diverse power applications.
• High Current Capacity: 4A peak source and 6A peak sink output for powerful transistor control.
• Enhanced Protection: Integrated UVLO protection on all power supplies and programmable dead time for safe operation.
• Fast and Accurate Switching: 33ns typical propagation delay and 5ns maximum pulse-width distortion for precision timing.
• Robust CMTI Performance: Common-mode transient immunity greater than 125V/ns ensures reliable performance in high-noise environments.
• Fast Disable Logic: Quickly shut down both outputs simultaneously with the built-in disable feature.