The 7Semi AONR21321 P-Channel MOSFET Mini Breakout is a compact high-power switching module designed for efficient load control, battery protection, power-path management, and high-side switching applications. Built around the AONR21321 P-Channel MOSFET from Alpha & Omega Semiconductor, the breakout combines low on-resistance, high current capability, and compact size, making it an ideal solution for modern embedded and power electronics projects. Its miniature footprint allows easy integration into space-constrained designs while maintaining excellent electrical performance.
Supporting drain-source voltages up to 30V and continuous currents up to 24A, this breakout is suitable for battery-powered systems, portable devices, DC power distribution, industrial automation, robotics, and custom power management circuits. The low RDS(ON) of just 16.5mΩ helps minimize conduction losses and heat generation, improving overall system efficiency and extending battery life in portable applications.
The breakout board provides convenient access to the MOSFET terminals, simplifying prototyping and product development. Whether used for high-side switching, battery disconnect circuits, power sequencing, load switching, or reverse polarity protection systems, the 7Semi AONR21321 Mini Breakout offers reliable performance and easy integration for both hobbyist and professional designs. The board is designed for reliable operation from -40°C to +80°C.
Features
• Built around the AONR21321 P-Channel MOSFET, providing high-current switching capability with low conduction losses for efficient power management applications.
• Supports drain-source voltages up to 30V and continuous drain currents up to 24A, making it suitable for battery systems, load switching, power distribution, and DC power control circuits.
• Features an ultra-low RDS(ON) of just 16.5mΩ maximum at VGS = -10V, minimizing power dissipation and improving overall system efficiency.
• Optimized for high-side switching applications where a P-channel MOSFET simplifies circuit design and eliminates the need for complex gate driver circuitry.
• Utilizes Alpha & Omega Semiconductor's advanced trench MOSFET technology, delivering excellent switching performance, high current capability, and reliable operation.
• Compact breakout board design provides convenient access to Gate, Source, and Drain connections, enabling quick integration into prototypes, custom PCBs, and embedded power systems.
- Type of product:
- P-channel mosfet breakout
- Voltage rating:
- 30V DC
- Current rating:
- 24A Max
- Operational temprature:
- -40C to 80C
- _3d_glb:
- https://7semi.com/content/3d-files/dfx_step/10099.glb
- Drain to source Voltage:
- 30V
- Continuous Drain current:
- -13A
- Power Dissipation:
- 24W
- Dimension In mm:
- L=16mm 7mm H=2.53mm